Implementation of Schottky Barrier Diodes (SBD) in Standard CMOS Process for Biomedical Applications

Design and optimisation of Schottky diodes in CMOS technology with application to passive RFID systems

In this paper, we present and analyze the most fundamental constraint of RFID systems, power rectification. This issue plays an important role in development of long-range RFID systems. Rectifiers are the key components in power rectifications and efficiency of an RFID system. Therefore this paper is concentrated in investigating this major issue. To tackle this problem a novel Schottky Barrier...

Down-Conversion Mixers for 60-GHz Wireless Communications Based on Schottky Barrier Diodes Fabricated in Standard CMOS Technology

Design and Fabrication of on Chip Microwave Pulse Power Detectors

Title of Dissertation: DESIGN AND FABRICATION OF ON CHIP MICROWAVE PULSE POWER DETECTORS Woochul Jeon, Doctor of Philosophy, 2005 Directed By: Professor John Melngailis Department of Electrical and Computer Engineering On-chip microwave pulse-power detectors are promising devices for many electrical systems of both military and commercial applications. Most research in microwave power detector ...

High Performance Power Diodes on Silicon Carbide and Diamond

Silicon Carbide and diamond Schottky barrier diodes (SBD) with an original and high efficiency termination are presented. The influences of termination parameters on the diodes electrical performance are investigated for both punch-through (PT) and non punch-through (nPT) structures by simulations. Design guidelines, based on simple analytical expressions, for ideal SBDs are included. Electrica...

High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomena

This paper experimentally studies the temperature dependencies of current–voltage (I–V) and capacitance–voltage (C–V) characteristics of SiC power devices, and discusses the relationships between physical phenomena and the measured characteristics in SiC. Two SiC Schottky barrier diodes (SBD) with different specifications were studied for temperatures ranging from 25 to 450◦C. Their I–V charact...